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Proceedings Paper

Limitation of OAI + AttPSM in EUVL
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Paper Abstract

In extreme ultraviolet lithography (EUVL), the application of off-axis illumination (OAI) leads to degradation in aerial image contrast, resulting in an unacceptably high mask error enhancement factor as the pattern pitch becomes smaller, even if an attenuated phase-shifting mask (AttPSM) of optimized attenuation is employed. We show that this is an intrinsic problem of OAI and cannot be remedied by adopting a thinner absorber, a smaller chief ray angle of incidence at the object side, or a projection optics box with a higher numerical aperture. Based on simulation results using the best conditions for OAI, we may conclude that single-patterning EUVL will probably end at a technology node with the minimum pitch of 22 nm, unless we can come up with other innovative ways for performing EUVL imaging or designing and formulating resists with blurs less than 5 nm at reasonable exposure dose.

Paper Details

Date Published: 1 April 2013
PDF: 8 pages
Proc. SPIE 8679, Extreme Ultraviolet (EUV) Lithography IV, 86791L (1 April 2013); doi: 10.1117/12.2010943
Show Author Affiliations
Shinn-Sheng Yu, Taiwan Semiconductor Manufacturing Co. Ltd. (Taiwan)
Yen-Cheng Lu, Taiwan Semiconductor Manufacturing Co. Ltd. (Taiwan)
Chih-Tsung Shih, Taiwan Semiconductor Manufacturing Co. Ltd. (Taiwan)
Jack J. H. Chen, Taiwan Semiconductor Manufacturing Co. Ltd. (Taiwan)
Anthony Yen, Taiwan Semiconductor Manufacturing Co. Ltd. (Taiwan)

Published in SPIE Proceedings Vol. 8679:
Extreme Ultraviolet (EUV) Lithography IV
Patrick P. Naulleau, Editor(s)

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