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Proceedings Paper

Germanium-containing resist for bilayer resist process
Author(s): Hirofumi Fujioka; Hiroyuki H. N. Nakajima; Shinji Kishimura; Hitoshi Nagata
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Paper Abstract

Germanium-containing resist material has been investigated as a new type of removable bilayer resist , since the oxide of germanium is soluble in conventional acids. The polymers derived from trimethylgermyl- styrene ( GeSt) show good resistance to 02 RIE , and their surface has been •determined to be converted into GeO, by XPS measurement before and after 02 RIE. The homopolymer of GeSt has been found to crosslink upon exposure to deep UV or electron beam radiation and to behave as a negative resist. The sensitivity is enhanced several times as high as that of the PGeSt by copolymerizing with 1 0 mol% chloromethyl-styrene ( CMSt) . The copolymer gives fine resist patterns with vertical sidewalls in a bilayer process. The germanium- containing resist pattern after 02 RIE is not completely dissolved in some acids such as H2 SO4 . This is due to the organic components remaining in the film. However, it has been found that it is perfectly dissolved in oxidizing acids such as fuming HNO and H2S04/H202(2/l) without a residue.

Paper Details

Date Published: 1 June 1990
PDF: 10 pages
Proc. SPIE 1262, Advances in Resist Technology and Processing VII, (1 June 1990); doi: 10.1117/12.20108
Show Author Affiliations
Hirofumi Fujioka, Mitsubishi Electric Corp. (Japan)
Hiroyuki H. N. Nakajima, Mitsubishi Electric Corp. (Japan)
Shinji Kishimura, Mitsubishi Electric Corp. (Japan)
Hitoshi Nagata, Mitsubishi Electric Corp. (Japan)

Published in SPIE Proceedings Vol. 1262:
Advances in Resist Technology and Processing VII
Michael P. C. Watts, Editor(s)

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