Share Email Print
cover

Proceedings Paper

Simultaneous observation of N- and EIT- resonances in 40-micron thin cell filled with Rb and buffer gas
Author(s): A. Sargsyan; R. Mirzoyan; S. Cartaleva; D. Sarkisyan
Format Member Price Non-Member Price
PDF $14.40 $18.00
cover GOOD NEWS! Your organization subscribes to the SPIE Digital Library. You may be able to download this paper for free. Check Access

Paper Abstract

We report simultaneous observation of the N- and EIT- resonances formation using multi-region (MR) cell, which contains micrometric –thin region with the thickness L varying in the range of 1μm - 90μm. MR cell is filled with natural Rb and 150 Torr neon gas. To form N- and EIT- resonances in Λ-system, two lasers are used: the probe (with tunable frequency), and the coupling (with the fixed frequency) with λ ≈ 795 nm wavelength and 1MHz- line-width. Although, the best parameters of N-resonance could be obtained for a cell thickness about 1cm, the use of MR cell with the thickness 30-40 μm still allows to obtain a good contrast and a narrow line-width. The N-resonance demonstrates subnatural increase of the probe absorption and is formed when probe frequency νP1 is in resonance with the 85Rb transition Fg=2 →5P1/2, while for the coupling frequency the condition υC = υP1 + Δ11=3036 MHz) is fulfilled. The EITresonance is formed when νP2 scans the transition 87Rb, Fg=2 →5P1/2 and for the same coupling frequency the condition υC = υP222=6835 MHz) should fulfill. The frequency separation between N- and EIT-resonances is equal to Δ21≈ 3.8 GHz. We also detected the low-frequency beating signal when the condition υC ≈ νP' is fulfilled, which allows a directly determine the coupling frequency υC. Splitting of N-resonance in the external longitudinal magnetic field into five components is detected. Possible applications are addressed.

Paper Details

Date Published: 15 March 2013
PDF: 6 pages
Proc. SPIE 8770, 17th International School on Quantum Electronics: Laser Physics and Applications, 87700K (15 March 2013); doi: 10.1117/12.2010673
Show Author Affiliations
A. Sargsyan, Institute for Physical Research (Armenia)
R. Mirzoyan, Institute for Physical Research (Armenia)
Lab. Interdisciplinaire Carnot de Bourgogne, CNRS, Univ. de Bourgogne (France)
S. Cartaleva, Institute of Electronics (Bulgaria)
D. Sarkisyan, Institute for Physical Research (Armenia)


Published in SPIE Proceedings Vol. 8770:
17th International School on Quantum Electronics: Laser Physics and Applications
Tanja N. Dreischuh; Albena T. Daskalova, Editor(s)

© SPIE. Terms of Use
Back to Top