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Proceedings Paper

EUV lithography using water-developable resist material derived from biomass
Author(s): Satoshi Takei; Akihiro Oshima; Tomoko G. Oyama; Takumi Ichikawa; Atsushi Sekiguchi; Miki Kashiwakura; Takahiro Kozawa; Seiichi Tagawa
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Paper Abstract

A water-developable resist material which had specific desired properties such as high sensitivity of 5.0 μC/cm2, thermal stability of 160 °C, suitable calculated linear absorption coefficients of 13.5 nm, and acceptable CF4 etch selectivity was proposed using EB lithography for EUV lithography. A water developable resist material derived from biomass is expected for non-petroleum resources, environmental affair, safety, easiness of handling, and health of the working people, instead of the common developable process of trimethylphenylammonium hydroxide. 100 nm line and 400 nm space patterning images with exposure dose of 5.0 μC/cm2 were provided by specific process conditions of EB lithography. The developed trehalose derivatives with hydroxyl groups and EB sensitive groups in the water-developable resist material derived from biomass were applicable to future development of high-sensitive and resolution negative type of water-developable resist material as a novel chemical design.

Paper Details

Date Published: 29 March 2013
PDF: 10 pages
Proc. SPIE 8682, Advances in Resist Materials and Processing Technology XXX, 86821T (29 March 2013); doi: 10.1117/12.2010643
Show Author Affiliations
Satoshi Takei, Toyama Prefectural Univ. (Japan)
Osaka Univ. (Japan)
Akihiro Oshima, Osaka Univ. (Japan)
JST-CREST (Japan)
Tomoko G. Oyama, Japan Atomic Energy Agency (Japan)
Takumi Ichikawa, Toyama Prefectural Univ. (Japan)
Atsushi Sekiguchi, Toyama Prefectural Univ. (Japan)
Miki Kashiwakura, Osaka Univ. (Japan)
Takahiro Kozawa, Osaka Univ. (Japan)
JST-CREST (Japan)
Seiichi Tagawa, Osaka Univ. (Japan)
JST-CREST (Japan)


Published in SPIE Proceedings Vol. 8682:
Advances in Resist Materials and Processing Technology XXX
Mark H. Somervell, Editor(s)

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