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Proceedings Paper

Evaluation of novel projection electron microscopy (PEM) optics for EUV mask inspection
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Paper Abstract

In order to achieve inspection sensitivity and a attainability for 1× node, a projection electron microscopy (PEM) system is employed that enables us to do high-speed/ high-resolution inspection that is not possible with the conventional DUV and EB inspection systems. By selecting a higher electron energy in imaging using Electron Optics (EO) exposure, and by applying a newly designed model to the basic PEM optics model, we have minimized the aberration in imaging that occurs when working with EO; and we have improved the related transmittance of such a system. The experimental result by showing designs for the improved transmittance, is obtained by making electron throughput measurement.

Paper Details

Date Published: 1 April 2013
PDF: 9 pages
Proc. SPIE 8679, Extreme Ultraviolet (EUV) Lithography IV, 86791T (1 April 2013); doi: 10.1117/12.2010615
Show Author Affiliations
Ryoichi Hirano, EUVL Infrastructure Development Ctr., Inc. (Japan)
Susumu Iida, EUVL Infrastructure Development Ctr., Inc. (Japan)
Tsuyoshi Amano, EUVL Infrastructure Development Ctr., Inc. (Japan)
Tsuneo Terasawa, EUVL Infrastructure Development Ctr., Inc. (Japan)
Hidehiro Watanabe, EUVL Infrastructure Development Ctr., Inc. (Japan)
Kenji Terao, EBARA Corp. (Japan)


Published in SPIE Proceedings Vol. 8679:
Extreme Ultraviolet (EUV) Lithography IV
Patrick P. Naulleau, Editor(s)

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