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Proceedings Paper

Chemical amplification of resist lines: a novel sub-half-micron bilayer resist tehnique for NUV and deep-UV lithography
Author(s): Michael Sebald; Rainer Leuschner; Recai Sezi; Hellmut Ahne; Siegfried Birkle
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Paper Abstract

The Chemical Amplification ofResist Lines (CARL) and its practicability in a bilayer/O2RIE processing scheme (Si-CARL) is described. Novel anhydride-containing resins and photoactive compounds of the diazonaphthoquinone type are used in top resists with sub-halfmicron resolution capability in both NUV and KrF excimer laser lithography. The silylating treatment of alkaline developed, positive tone top resist patterns with aqueous solutions of bisaminoalkyl-oligodimethylsiloxanes can be performed on standard puddle development tracks at room temperature. A concomitant linewidth increase is used to reduce dimensions of resist openings, e.g. trenches or contact holes, with good process control. Equal lines and spaces were achieved by treatment of slightly overexposedtopresist patterns. Modified top resistpatterns are transferred intothe underlying 1 .3 -1.8 j.tm thick planarizing layer without linewidth variationtogive steepprofiles and high aspect ratios. Thus, 0.3 tm resolution is obtained with KrF excimer laser exposure (0.35 NA). The attained resolution of 0.3 tm features with g-line exposure (0.55 NA) represents ak-factor of 0.38, according to the Rayleigh relation. This paper discusses process and lithographic performance characteristics of the novel Si-CARL process.

Paper Details

Date Published: 1 June 1990
PDF: 10 pages
Proc. SPIE 1262, Advances in Resist Technology and Processing VII, (1 June 1990); doi: 10.1117/12.20106
Show Author Affiliations
Michael Sebald, Siemens AG (Germany)
Rainer Leuschner, Siemens AG (Germany)
Recai Sezi, Siemens AG (Germany)
Hellmut Ahne, Siemens AG (Germany)
Siegfried Birkle, Siemens AG (Germany)


Published in SPIE Proceedings Vol. 1262:
Advances in Resist Technology and Processing VII
Michael P. C. Watts, Editor(s)

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