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Proceedings Paper

Low-temperature characterization of a 1.55-µm multiple-quantum-well laser down to 10 K
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Paper Abstract

A ridge-waveguide 1.55-μm semiconductor laser with a multiple-quantum-well carrier confinement structure was characterized from room temperature down to 10 K. The temperature dependence of important laser parameters, such as threshold current, series resistance, differential efficiency, and emission wavelength, extracted from standard L-I/I-V measurements, is reported. The applicability of the standard ideal-diode model of semiconductor laser at cryogenic temperatures is analyzed.

Paper Details

Date Published: 14 March 2013
PDF: 11 pages
Proc. SPIE 8619, Physics and Simulation of Optoelectronic Devices XXI, 861913 (14 March 2013); doi: 10.1117/12.2010029
Show Author Affiliations
Emmanuel Mercado, The Univ. of New Mexico (United States)
Dipendra Adhikari, The Univ. of New Mexico (United States)
Gennady A. Smolyakov, The Univ. of New Mexico (United States)
Marek Osiński, The Univ. of New Mexico (United States)


Published in SPIE Proceedings Vol. 8619:
Physics and Simulation of Optoelectronic Devices XXI
Bernd Witzigmann; Marek Osinski; Fritz Henneberger; Yasuhiko Arakawa, Editor(s)

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