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Proceedings Paper

Evaluation of aliphatic 2-diazoketones as photoactive compounds for deep-UV lithography
Author(s): George Schwartzkopf; Kathleen B. Gabriel; John B. Covington
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Paper Abstract

Aliphatic 2-diazoketones of various structural types were synthesized then screened as photoactive components of deep U V resists Several of the materials were readily photolyzed upon deep U.V. irradiation but also exhibited reasonable thermal stability. Representative resists incorporating these materials gave positive tone with metal ion containing developers and negative tone with metal ion free developers. Resist sensitivity was dependent on the frequency spectrum of the exposing deep U.V. light.

Paper Details

Date Published: 1 June 1990
PDF: 12 pages
Proc. SPIE 1262, Advances in Resist Technology and Processing VII, (1 June 1990); doi: 10.1117/12.20100
Show Author Affiliations
George Schwartzkopf, J. T. Baker Inc. (United States)
Kathleen B. Gabriel, J. T. Baker Inc. (United States)
John B. Covington, J.T. Baker Inc. (United States)


Published in SPIE Proceedings Vol. 1262:
Advances in Resist Technology and Processing VII
Michael P. C. Watts, Editor(s)

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