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Proceedings Paper

Effect of optical phonons on the binding energy of an exciton in a type-II heterojunction
Author(s): X. X. Liang; S. L. Ban; R. S. Zheng
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Paper Abstract

The binding energy of an exciton in a type II polar-polar semiconductor heterojunction is calculated including both the interface image potential and the electron-phonon coupling. There are two branches of interface optical modes and two branches of the half-space longitudinal optical modes confined in the different media coupling with both the electron and hole. The contributions of the half space and the interface modes of phonons and the image potential of the binding energy are obtained by a variational calculation. It is shown that both the interface and half space phonons play more important role than image potential for the binding energy of the exciton with a large mass difference between the electron and hole. When this difference is small, their contributions to the exciton are all unimportant.

Paper Details

Date Published: 9 February 1995
PDF: 10 pages
Proc. SPIE 2362, International Conference on Excitonic Processes in Condensed Matter, (9 February 1995); doi: 10.1117/12.200997
Show Author Affiliations
X. X. Liang, Inner Mongolia Univ. (China)
S. L. Ban, Inner Mongolia Univ. (China)
R. S. Zheng, Inner Mongolia Univ. (China)


Published in SPIE Proceedings Vol. 2362:
International Conference on Excitonic Processes in Condensed Matter
Jai Singh, Editor(s)

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