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Proceedings Paper

High-temperature efficiency of exciton-polariton processes in semiconductors and 2D systems
Author(s): G. N. Aliev; O. S. Coschug-Toates; Vladimir A. Kosobukin; Ruben P. Seisyan; S. A. Vaganov
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Paper Abstract

The absorption-edge spectra have been studied in the temperature range from 4 to 300 K for single-crystal CdTe, ZnTe, GaAs wafers and GaAs/(Al,Ga)As multiple quantum well (MQW) structures. In all cases the frequency integrated absorption coefficient K is found to increase monotonously with temperature T up to T equals T* and to keep constant above T*. The temperatures T*, depending on semiconducting materials, might be considered as critical ones corresponding to a change in polaritonic energy transport mechanism due to the lack of spatial dispersion at T > T*. It was shown, that though the measured temperature T* approximately 102 K correspond to much larger linewidths than could be explained by using the theoretical value of the exciton damping parameter, this discrepancy can be overcome if a temperature-dependent inhomogeneous broadening is taken into account consistently. A similar temperature dependence of K with T* approximately equals 20 K has been observed for the first time in GaAs/(Al,Ga)As MQW-structures.

Paper Details

Date Published: 9 February 1995
PDF: 8 pages
Proc. SPIE 2362, International Conference on Excitonic Processes in Condensed Matter, (9 February 1995); doi: 10.1117/12.200989
Show Author Affiliations
G. N. Aliev, A.F. Ioffe Physical-Technical Institute (Russia)
O. S. Coschug-Toates, The Open Univ. (Russia)
Vladimir A. Kosobukin, A.F. Ioffe Physical-Technical Institute (Russia)
Ruben P. Seisyan, A.F. Ioffe Physical-Technical Institute (Russia)
S. A. Vaganov, A.F. Ioffe Physical-Technical Institute (Russia)

Published in SPIE Proceedings Vol. 2362:
International Conference on Excitonic Processes in Condensed Matter
Jai Singh, Editor(s)

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