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Proceedings Paper

Ultrafast exciton dynamics in semiconductors: effects of disorder and confinement
Author(s): Jorn M. Hvam; Vadim G. Lyssenko; D. Birkedal; John Erland
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Paper Abstract

The dynamics of excitonic transitions in semiconductors have been investigated by degenerate four-wave mixing experiments. We have studied the coherence, interference and dephasing of free, bound and localized excitons in bulk semiconductors and of quasi-2D excitons in quantum well structures. The influence of inhomogeneous broadening is investigated and compared with quantum interference in a continuum of states. The nature of four-wave mixing beats in a system of bound excitons and biexcitons is discussed.

Paper Details

Date Published: 9 February 1995
PDF: 11 pages
Proc. SPIE 2362, International Conference on Excitonic Processes in Condensed Matter, (9 February 1995); doi: 10.1117/12.200978
Show Author Affiliations
Jorn M. Hvam, Technical Univ. of Denmark (Denmark)
Vadim G. Lyssenko, Technical Univ. of Denmark (Denmark)
D. Birkedal, Technical Univ. of Denmark (Denmark)
John Erland, Odense Univ. (Denmark)

Published in SPIE Proceedings Vol. 2362:
International Conference on Excitonic Processes in Condensed Matter
Jai Singh, Editor(s)

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