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Proceedings Paper

Dry development of the top imaging layer for bilayer system in the down stream of O2/CF4 plasma
Author(s): Takushi Motoyama; Satoru Mihara; Naomichi Abe
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Paper Abstract

We investigated dry-develop resist as the top layer in a bilayer system. The resist consisted of polyacetylene with silicon atoms, PTMDSO (poly 4,4,7,74etramethyl-4,7-disila- 2-octyne) as a base polymer, and a phenyl azide as a photosensitive addition agent. 0.30 pm line and space negative patterns were resolved, when the resist exposed using a KrF excimer laser stepper system was developed in the down stream of 02/CF4 plasma. The sensitivity was around 100 mJ/cm2 and the oxygen plasma resistance was about 50 times greater than that of novolak resist.

Paper Details

Date Published: 1 June 1990
PDF: 8 pages
Proc. SPIE 1262, Advances in Resist Technology and Processing VII, (1 June 1990); doi: 10.1117/12.20096
Show Author Affiliations
Takushi Motoyama, Fujitsu Ltd. (Japan)
Satoru Mihara, Fujitsu Ltd. (Japan)
Naomichi Abe, Fujitsu Ltd. (Japan)

Published in SPIE Proceedings Vol. 1262:
Advances in Resist Technology and Processing VII
Michael P. C. Watts, Editor(s)

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