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Proceedings Paper

Highly etch resistant, negative resist for deep-UV and electron beam lithography
Author(s): Dennis R. McKean; Nicholas J. Clecak; Lester A. Pederson
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Paper Abstract

I lighly sensitive resists have been developed from a combination of silsesquioxanes, acid photogenerators, and phenolic resins. The resist forms negative images and is developable with aqueous base. Both electron beam and deep-uv optical sensitivity was observed. The films displayed exceptionally high oxygen reactive ion etch resistance. Bilayer systems were developed with this resist as the imaging layer with either polyimide or hard baked novolac as the planarizing layer. Improved optical resists for single layer application have been obtained by using poly(4-hydroxystyrene) derivatives as the matrix resin.

Paper Details

Date Published: 1 June 1990
PDF: 9 pages
Proc. SPIE 1262, Advances in Resist Technology and Processing VII, (1 June 1990); doi: 10.1117/12.20094
Show Author Affiliations
Dennis R. McKean, IBM/Almaden Research Ctr. (United States)
Nicholas J. Clecak, IBM/Almaden Research Ctr. (United States)
Lester A. Pederson, IBM/Almaden Research Ctr. (United States)


Published in SPIE Proceedings Vol. 1262:
Advances in Resist Technology and Processing VII
Michael P. C. Watts, Editor(s)

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