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Proceedings Paper

Silicon diffusion characteristics of different surface-imaging resists
Author(s): George R. Misium; Monte A. Douglas; Cesar M. Garza; Charles B. Dobson
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Paper Abstract

This paper describes a study of the silylation characteristics of different resists that are suitable for single-layer, surface-imaging patterning applications. In particular, the effect of different process parameters on the silicon diffusion in UCB's Plasmask®resist is discussed. The diffusion profile of silicon in the resist is decorated by a staining technique followed by SEM analysis. This allows for two-dimensional resolution of the diffusion profiles and the observation of other process attributes. Links are established among exposure, silylation and etch by observing silylated profiles. It is shown that the silylation profile characteristics are dominated by the resist image created during exposure. Also, the effects of post-exposure bake and silylating agent temperature are presented. Diffusion profiles for MacDermid's PR1024 are also shown.

Paper Details

Date Published: 1 June 1990
PDF: 10 pages
Proc. SPIE 1262, Advances in Resist Technology and Processing VII, (1 June 1990); doi: 10.1117/12.20091
Show Author Affiliations
George R. Misium, Texas Instruments Inc. (United States)
Monte A. Douglas, Texas Instruments Inc. (United States)
Cesar M. Garza, Texas Instruments Inc. (United States)
Charles B. Dobson, Univ. of North Texas (United States)

Published in SPIE Proceedings Vol. 1262:
Advances in Resist Technology and Processing VII
Michael P. C. Watts, Editor(s)

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