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Proceedings Paper

Properties of high-density two-dimensional electron gases at Mott/band insulator interfaces
Author(s): Susanne Stemmer; Pouya Moetakef; Tyler Cain; Clayton Jackson; Daniel Ouellette; James R. Williams; David Goldhaber-Gordon; Leon Balents; S. James Allen
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Paper Abstract

Heterostructures and superlattices consisting of a prototype Mott insulator, GdTiO3, and the band insulator SrTiO3, are grown by molecular beam epitaxy and show intrinsic electronic reconstruction, approximately ½ electron per surface unit cell at each GdTiO3/SrTiO3 interface. Insights into charge distribution, the influence of the electrostatic boundary conditions, and strong correlation effects will be presented.

Paper Details

Date Published: 18 March 2013
PDF: 6 pages
Proc. SPIE 8626, Oxide-based Materials and Devices IV, 86260F (18 March 2013); doi: 10.1117/12.2009086
Show Author Affiliations
Susanne Stemmer, Univ. of California, Santa Barbara (United States)
Pouya Moetakef, Univ. of California, Santa Barbara (United States)
Tyler Cain, Univ. of California, Santa Barbara (United States)
Clayton Jackson, Univ. of California, Santa Barbara (United States)
Daniel Ouellette, Univ. of California, Santa Barbara (United States)
James R. Williams, Stanford Univ. (United States)
David Goldhaber-Gordon, Stanford Univ. (United States)
Leon Balents, Univ. of California, Santa Barbara (United States)
S. James Allen, Univ. of California, Santa Barbara (United States)


Published in SPIE Proceedings Vol. 8626:
Oxide-based Materials and Devices IV
Ferechteh Hosseini Teherani; David C. Look; David J. Rogers, Editor(s)

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