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Proceedings Paper

Quantum dot lasers and relevant nanoheterostructures
Author(s): Alexey E. Zhukov; Natalia V. Kryzhanovskaya; Artem V. Savelyev; Alexey M. Nadtochiy; Ekaterina M. Arakcheeva; Fedor I. Zubov; Vladimir V. Korenev; Mikhail V. Maximov; Yuri M. Shernyakov; Marina M. Kulagina; Ilia A. Slovinskiy; Daniil A. Livshits; Alexandros Kapsalis; Charis Mesaritakis; Dimitris Syvridis; Alexander Mintairov
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Paper Abstract

Spectral and power characteristics of QD stripe lasers operating in two-state lasing regime have been studied in a wide range of operation conditions. It was demonstrated that neither self-heating nor increase of the homogeneous broadening are responsible for quenching of the ground-state lasing beyond the two-state lasing threshold. It was found that difference in electron and hole capture rates strongly affects light-current curve. Modulation p-type doping is shown to enhance the peak power of GS lasing transition. Microring and microdisk structures (D = 4-9 μm) comprising 1.3 μm InAs/InGaAs quantum dots have been fabricated and studied by μ-PL and NSOM. Ground-state lasing was achieved well above root temperature (up to 380 K). Effect of inner diameter on threshold characteristics was evaluated.

Paper Details

Date Published: 29 November 2012
PDF: 9 pages
Proc. SPIE 8552, Semiconductor Lasers and Applications V, 855202 (29 November 2012); doi: 10.1117/12.2009055
Show Author Affiliations
Alexey E. Zhukov, Saint Petersburg Academic Univ. (Russian Federation)
Natalia V. Kryzhanovskaya, Saint Petersburg Academic Univ. (Russian Federation)
Artem V. Savelyev, Saint Petersburg Academic Univ. (Russian Federation)
Alexey M. Nadtochiy, Saint Petersburg Academic Univ. (Russian Federation)
Ekaterina M. Arakcheeva, Saint Petersburg Academic Univ. (Russian Federation)
Fedor I. Zubov, Saint Petersburg Academic Univ. (Russian Federation)
Vladimir V. Korenev, Saint Petersburg Academic Univ. (Russian Federation)
Mikhail V. Maximov, Ioffe Physical-Technical Institute (Russian Federation)
Yuri M. Shernyakov, Ioffe Physical-Technical Institute (Russian Federation)
Marina M. Kulagina, Ioffe Physical-Technical Institute (Russian Federation)
Ilia A. Slovinskiy, Ioffe Physical-Technical Institute (Russian Federation)
Daniil A. Livshits, Innolume GmbH (Germany)
Alexandros Kapsalis, Univ. of Athens (Greece)
Charis Mesaritakis, Univ. of Athens (Greece)
Dimitris Syvridis, Univ. of Athens (Greece)
Alexander Mintairov, Univ. of Notre Dame (United States)


Published in SPIE Proceedings Vol. 8552:
Semiconductor Lasers and Applications V
Ning Hua Zhu; Jinmin Li; Frank H. Peters; Changyuan Yu, Editor(s)

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