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Proceedings Paper

1X deep-UV lithography with chemical amplification for 1-micron DRAM production
Author(s): John G. Maltabes; Steven J. Holmes; James R. Morrow; Roger L. Barr; Mark C. Hakey; Gregg Reynolds; William R. Brunsvold; C. Grant Willson; Nicholas J. Clecak; Scott A. MacDonald; Hiroshi Ito
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Paper Abstract

This paper describes methods used and results obtained in the production of 1-megabit (Mb) DRAM chips, using a chemically amplified tertiary-butoxy carhonyl hydroxystyrene (t-BOC) resist and 1X lithography. 'Flie internally developed resist provided high sensitivity and contrast, for I rn resolution on a Perkin Elmer Micralign model 500 (PE 500) in the deep UV. Characterization, and modification of the PE 500 were required for this first application in the deep UV. The manufacturing process had photo limited yield in excess of 95% with throughput of 100 wafers per hour.

Paper Details

Date Published: 1 June 1990
PDF: 6 pages
Proc. SPIE 1262, Advances in Resist Technology and Processing VII, (1 June 1990); doi: 10.1117/12.20090
Show Author Affiliations
John G. Maltabes, IBM Corp. (United States)
Steven J. Holmes, IBM Corp. (United States)
James R. Morrow, IBM Corp. (United States)
Roger L. Barr, IBM Corp. (United States)
Mark C. Hakey, IBM Corp. (United States)
Gregg Reynolds, IBM Corp. (United States)
William R. Brunsvold, IBM Corp. (United States)
C. Grant Willson, IBM Corp. (United States)
Nicholas J. Clecak, IBM Corp. (United States)
Scott A. MacDonald, IBM Corp. (United States)
Hiroshi Ito, IBM Corp. (United States)


Published in SPIE Proceedings Vol. 1262:
Advances in Resist Technology and Processing VII
Michael P. C. Watts, Editor(s)

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