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Proceedings Paper

Grayscale lithography: 3D structuring and thickness control
Author(s): Marcel Heller; Dieter Kaiser; Maik Stegemann; Georg Holfeld; Nicoló Morgana; Jens Schneider; Daniel Sarlette
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Paper Abstract

Grayscale lithography has become a common technique for three dimensional structuring of substrates. In order to make the process useful for manufacturing of semiconductor and in particular optoelectronic devices, high reproducible and uniform final film thicknesses are required. Simulations based on a calibrated resist model are used to predict customized process parameters from pixel layout to 3d substrate patterning. Multiple, arbitrary resist heights are reached by using i-line lithography. Scalable and uniform transfer of discrete step heights into oxide are realized by multiple alternating high selective resist and oxide (MASO) etch. Requirements and limitations of reliable 3D film thickness and uniformity control within a CMOS fabrication environment are being discussed.

Paper Details

Date Published: 12 April 2013
PDF: 12 pages
Proc. SPIE 8683, Optical Microlithography XXVI, 868310 (12 April 2013); doi: 10.1117/12.2008847
Show Author Affiliations
Marcel Heller, Infineon Technologies Dresden GmbH (Germany)
Dieter Kaiser, Infineon Technologies Dresden GmbH (Germany)
Maik Stegemann, Infineon Technologies Dresden GmbH (Germany)
Georg Holfeld, Infineon Technologies Dresden GmbH (Germany)
Nicoló Morgana, Infineon Technologies Dresden GmbH (Germany)
Jens Schneider, Infineon Technologies Dresden GmbH (Germany)
Daniel Sarlette, Infineon Technologies Dresden GmbH (Germany)

Published in SPIE Proceedings Vol. 8683:
Optical Microlithography XXVI
Will Conley, Editor(s)

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