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Proceedings Paper

The correlation between ArF resist dispense volume and surface tension
Author(s): Tung-Chang Kuo
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Paper Abstract

Resist spin coating has already been applied to IC industry for a very long time. Uniform spin coat of photoresist has been demonstrated on 12” wafers with conventional 6” and 8” methods. Meanwhile, resist dispense volume reduction has also been widely studied and investigated. In our paper, we focus on the physical properties of photoresist and prewet solvent. We try to figure out the interfacial behavior/mechanism between ArF resist and its related pre-wet solvent by systematic methods and DOE splits. In the experiments, different ArF resists among various solvent systems and two distinct pre-wet systems are tested and researched. Certain ArF resists generate smaller dispense volume compared with other PRs even under the same process condition. Eventually, from the splits we find out the trend which correlates to the interaction between resist and pre-wet solvent. The trend proves that our hypothesis is correct. The conclusion will contribute to our future resist selection. The conclusion will also provide new resist design concept to resist vendors. Basic studies and experiments are carried out under our limited resources, equipment and time. We have tried our best to find out the mechanism and have proved it.

Paper Details

Date Published: 10 April 2013
PDF: 6 pages
Proc. SPIE 8681, Metrology, Inspection, and Process Control for Microlithography XXVII, 86810X (10 April 2013); doi: 10.1117/12.2008841
Show Author Affiliations
Tung-Chang Kuo, United Microelectronics Corp. (Taiwan)

Published in SPIE Proceedings Vol. 8681:
Metrology, Inspection, and Process Control for Microlithography XXVII
Alexander Starikov; Jason P. Cain, Editor(s)

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