Share Email Print
cover

Proceedings Paper

Systematic investigation of the photoresponse and dissolution characteristics of an acid-hardening resist
Author(s): Siddhartha Das; James W. Thackeray; Masayuki Endo; Joseph C. Langston; Henry T. Gaw
Format Member Price Non-Member Price
PDF $14.40 $18.00

Paper Abstract

Acid hardening resists (AHR) which rely on chemical amplification schemes for increased photospeed arefinding wide acceptance as a viable approach to deep UV lithography. The understanding of the underlying acid-catalyzed chemistry and the processing protocol necessary to exploit the advantages of these resists is a subject of active interest in several laboratories. The thermal response of acid-hardening resists has been quantified in a lumped parameter model proposed in an earlier study [ 1]. In the current paper, we report on recent results obtained with a commercial AHR. We have investigated the processing latitude and the resist profile sensitivity as a function of postexposure bake and development conditions under normalized dose conditions predicted by our model. The mean free path of the acid has been estimated to ?e less than 70 A. The resist-induced linewidth bias has been correlated to the conjugate point of the aerial image over a wide range of processing conditions. Since acid diffusion is restricted by theformation of a crosslinked ne'tWork, the ability to manipulate the latent image as measured by the isofocal region of the resist has been investigated. This assumes importance in cases where the process needs to be optimized to obtain a desired bias. Since the exposure and development conditions are not as strongly coupled in acid hardening resists, the potential exists to optimize the development process independently and suitable parameters have been defined for this step.

Paper Details

Date Published: 1 June 1990
PDF: 12 pages
Proc. SPIE 1262, Advances in Resist Technology and Processing VII, (1 June 1990); doi: 10.1117/12.20088
Show Author Affiliations
Siddhartha Das, Intel Corp. (United States)
James W. Thackeray, Shipley Co., Inc. (United States)
Masayuki Endo, Matsushita Electric Industrial Co., Ltd. (Japan)
Joseph C. Langston, Intel Corp. (United States)
Henry T. Gaw, Intel Corp. (United States)


Published in SPIE Proceedings Vol. 1262:
Advances in Resist Technology and Processing VII
Michael P. C. Watts, Editor(s)

© SPIE. Terms of Use
Back to Top