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Proceedings Paper

Electrical design for lateral junction photonic crystal lasers
Author(s): Jan Petykiewicz; Gary Shambat; Bryan Ellis; Jelena Vučković
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Paper Abstract

We model conduction and free-carrier injection in laterally doped GaAs p-i-n diodes formed in one and twodimensional photonic crystal (PC) nanocavities. Finite element simulations show that the lateral geometry exhibits high electrical conductivity for a wide range of PC parameters and allows for precise control over current flow, enabling efficient carrier injection despite fast surface recombination. Thermal simulations indicate that the temperature increase during steady-state operation is only 3.3K in nanobeams and 0.29K in L3 defect nanocavities. The results affirm the suitability of lateral doping in PC devices and indicate criteria for further design optimization.

Paper Details

Date Published: 14 March 2013
PDF: 8 pages
Proc. SPIE 8619, Physics and Simulation of Optoelectronic Devices XXI, 86190W (14 March 2013); doi: 10.1117/12.2008775
Show Author Affiliations
Jan Petykiewicz, Stanford Univ. (United States)
Gary Shambat, Stanford Univ. (United States)
Bryan Ellis, Soraa, Inc. (United States)
Jelena Vučković, Stanford Univ. (United States)

Published in SPIE Proceedings Vol. 8619:
Physics and Simulation of Optoelectronic Devices XXI
Bernd Witzigmann; Marek Osinski; Fritz Henneberger; Yasuhiko Arakawa, Editor(s)

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