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Proceedings Paper

Holding beam injection for improving self-induced polarization rotation in a semiconductor optical amplifier
Author(s): S. J. Zhang; Y. L. Zhang; S. Liu; Y. Liu
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Paper Abstract

A scheme for improving the self-induced polarization rotation (SPR) in a semiconductor optical amplifier (SOA) based on holding beam injection is proposed. Gain recovery of TE and TM modes can be largely accelerated through an appropriate holding beam injection, with which the response of SPR in the SOA for ultrafast signal can be speeded up. Holding beam injection is employed in SPR-based optical power equalization as an example of validation, in which the distortion of RZ (return-to-zero)and the overshoot of NRZ (non-return-to-zero) signal are largely suppressed, and the extension ratio are improved by 10 dB and 7 dB, respectively.

Paper Details

Date Published: 29 November 2012
PDF: 5 pages
Proc. SPIE 8552, Semiconductor Lasers and Applications V, 85520B (29 November 2012); doi: 10.1117/12.2008719
Show Author Affiliations
S. J. Zhang, Univ. of Electronic Science and Technology of China (China)
Y. L. Zhang, Univ. of Electronic Science and Technology of China (China)
S. Liu, Univ. of Electronic Science and Technology of China (China)
Y. Liu, Univ. of Electronic Science and Technology of China (China)


Published in SPIE Proceedings Vol. 8552:
Semiconductor Lasers and Applications V
Ning Hua Zhu; Jinmin Li; Frank H. Peters; Changyuan Yu, Editor(s)

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