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Proceedings Paper

Ultra-short channel field effect transistors based on Ge/Si core/shell nanowires
Author(s): Binh-Minh Nguyen; Yang Liu; Wei Tang; S. Tom Picraux; Shadi A. Dayeh
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Paper Abstract

In recent years, transistor technology has scaled down to sub-20 nm channel length with many performance-boosting techniques at the material and device levels in order to meet the increasing demand for higher performance electronics. The nanowire (NW) device architecture has proven itself as a viable candidate for the sub-20 nm generation transistors. Compared to Si NWs, the Ge/Si core/shell NW alternative can supply larger on-current due to the increased confined hole mobility and ohmic behavior at the Ni-alloyed drain/source contacts. It is thus important to understand transport mechanisms in this core/shell structure, and develop pathway to realize ultra-short channel core/shell NW field effect transistors (FETs). In this paper, we report the growth of Ge/Si concentric NWs with precise control of Si shell thickness. Performance of FETs fabricated from core/shell NWs exhibited a clear dependence on NWs’ diameters, with steeper sub-threshold slopes for smaller NWs. An 18 nm diameter Ge/Si heterostructure FET exhibited sub-threshold swing of 102 mV/decade, with a maximum transconductance of 3.4 μS at VDS =-100 mV. Finally, transmission electron microscopy was utilized to monitor and control the solid state reaction between Ni contacts and Ge/Si NWs, resulting in ultrascaled channel lengths, as short as 5 nm.

Paper Details

Date Published: 4 February 2013
PDF: 10 pages
Proc. SPIE 8631, Quantum Sensing and Nanophotonic Devices X, 863118 (4 February 2013); doi: 10.1117/12.2008676
Show Author Affiliations
Binh-Minh Nguyen, Los Alamos National Lab. (United States)
Yang Liu, Sandia National Labs (United States)
Wei Tang, University of California, Los Angeles (United States)
Los Alamos National Lab. (United States)
S. Tom Picraux, Los Alamos National Lab. (United States)
Shadi A. Dayeh, Los Alamos National Lab. (United States)


Published in SPIE Proceedings Vol. 8631:
Quantum Sensing and Nanophotonic Devices X
Manijeh Razeghi, Editor(s)

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