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Proceedings Paper

Sensitivity enhancers for chemically amplified resists
Author(s): William R. Brunsvold; Ranee W. Kwong; Warren Montgomery; Wayne M. Moreau; Harbans S. Sachdev; Kevin M. Welsh
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Paper Abstract

The addition of phenolic compounds to positive tone chemically amplified resists has increased sensitivity by approximately 2X for Deep UV exposures and up to 5Xfor X-ray imaging. Sensitivity enhancement during e-heam exposures was only 20%. Additives like hydroquinone sensitize various acid generators including triphenyl sulfonium triflate (TPS) and N-tosyloxyphthalimide (PTS) without affecting contrast and image profiles. The sensitization occurs in poly(t-butyloxycarbonyloxystyrene) as well as in base soluble resins. With PTS, the predominant mechanism is believed to involve electron transfer from the excited singlet or triplet state of the additive to the acid generator. For onium salt, direct photolysis plays a significant role in acid generation so that the effect of the additives is not as great as with PTS.

Paper Details

Date Published: 1 June 1990
PDF: 8 pages
Proc. SPIE 1262, Advances in Resist Technology and Processing VII, (1 June 1990); doi: 10.1117/12.20084
Show Author Affiliations
William R. Brunsvold, IBM/East Fishkill Facility (United States)
Ranee W. Kwong, IBM/East Fishkill Facility (United States)
Warren Montgomery, IBM/East Fishkill Facility (United States)
Wayne M. Moreau, IBM/East Fishkill Facility (United States)
Harbans S. Sachdev, IBM/East Fishkill Facility (United States)
Kevin M. Welsh, IBM/East Fishkill Facility (United States)


Published in SPIE Proceedings Vol. 1262:
Advances in Resist Technology and Processing VII
Michael P. C. Watts, Editor(s)

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