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Proceedings Paper

Aqueous base developable novel deep-UV resist for KrF excimer laser lithography
Author(s): Makoto Murata; Toshihiko Takahashi; Mitsunobu Koshiba; Shin-ichi Kawamura; Tsuguo Yamaoka
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Paper Abstract

A novel deep-UV resist which consists of poly(p-trimethylsilyloxystyrene) and pnitrobenzyl- 9,10-diethoxyanthracene-2-sulfonate showed capability of resolving 0.3 im lines and spaces with steep sidewalls at 0.8 im thickness by use of a KrF excimer laser stepper. Wet development in a conventional tetramethylammonium hydroxide developer caused no critical thickness loss in the unexposed area. Owing to its oxygen plasma durability, this resist was shown to work as a top layer of a bi-layer resist.

Paper Details

Date Published: 1 June 1990
PDF: 8 pages
Proc. SPIE 1262, Advances in Resist Technology and Processing VII, (1 June 1990); doi: 10.1117/12.20083
Show Author Affiliations
Makoto Murata, Japan Synthetic Rubber Co., Ltd. (Japan)
Toshihiko Takahashi, Japan Synthetic Rubber Co., Ltd. (Japan)
Mitsunobu Koshiba, Japan Synthetic Rubber Co., Ltd. (Japan)
Shin-ichi Kawamura, Japan Synthetic Rubber Co., Ltd. (Japan)
Tsuguo Yamaoka, Chiba Univ. (Japan)


Published in SPIE Proceedings Vol. 1262:
Advances in Resist Technology and Processing VII
Michael P. C. Watts, Editor(s)

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