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Proceedings Paper

GaSb-based all-semiconductor mid-IR plasmonics
Author(s): T. Taliercio; V. Ntsame Guilengui; L. Cerutti; J.-B. Rodriguez; E. Tournié
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Paper Abstract

Electrical and optical characterizations of highly-doped InAsSb layers lattice matched to GaSb substrates show the possibility to control their plasma frequency in the mid-infrared range. Reflectance experiments performed on InAsSb sub-wavelength arrays evidence localized surface plasmon resonances which can be modeled by finite difference time domain method. By adjusting the refractive index of the surrounding material and the geometry of the periodic arrays it is possible to control the frequency of the plasmonic resonances. Our results show that GaSb-based materials can be the building block of all-semiconductor mid-infrared plasmonic devices.

Paper Details

Date Published: 4 February 2013
PDF: 8 pages
Proc. SPIE 8631, Quantum Sensing and Nanophotonic Devices X, 863120 (4 February 2013); doi: 10.1117/12.2007903
Show Author Affiliations
T. Taliercio, Institut d’Electronique du Sud, CNRS, Univ. Montpellier 2 (France)
V. Ntsame Guilengui, Institut d’Electronique du Sud, CNRS, Univ. Montpellier 2 (France)
L. Cerutti, Institut d’Electronique du Sud, CNRS, Univ. Montpellier 2 (France)
J.-B. Rodriguez, Institut d’Electronique du Sud, CNRS, Univ. Montpellier 2 (France)
E. Tournié, Institut d’Electronique du Sud, CNRS, Univ. Montpellier 2 (France)


Published in SPIE Proceedings Vol. 8631:
Quantum Sensing and Nanophotonic Devices X
Manijeh Razeghi, Editor(s)

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