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Proceedings Paper

Junction temperature measurements and reliability of GaN FETs
Author(s): Martin Kuball; James W. Pomeroy; Miguel Montes Bajo; Marco Silvestri; Michael J. Uren; Nicole Killat
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Paper Abstract

AlGaN/GaN field effect transistors (FETs) have shown tremendous advances in performance and reliability over recent years. They are unique in that they operate under the presence of a high density of defects, imperfect surfaces and interfaces. We review key challenges related to defects in these transistors, and recent novel characterization techniques and approaches to study the impact of these imperfections on the device thermal characteristics and reliability, as basis for developing devices with an increased safe operating area (SOA). This includes the development of a nanometer resolution junction temperature analysis using SiC solid immersion lenses, results on hot electron effects and on the role of dislocations and point defects for device reliability. In addition techniques such as dynamic transconductance to access traps near the channel are presented. The approaches shown take advantage of the complementary nature of electrical, optical and microstructural device analysis, combined with thermal and electrical device simulations.

Paper Details

Date Published: 4 March 2013
PDF: 10 pages
Proc. SPIE 8625, Gallium Nitride Materials and Devices VIII, 86250X (4 March 2013); doi: 10.1117/12.2007817
Show Author Affiliations
Martin Kuball, The Univ. of Bristol (United Kingdom)
James W. Pomeroy, The Univ. of Bristol (United Kingdom)
Miguel Montes Bajo, The Univ. of Bristol (United Kingdom)
Marco Silvestri, The Univ. of Bristol (United Kingdom)
Michael J. Uren, The Univ. of Bristol (United Kingdom)
Nicole Killat, The Univ. of Bristol (United Kingdom)


Published in SPIE Proceedings Vol. 8625:
Gallium Nitride Materials and Devices VIII
Jen-Inn Chyi; Yasushi Nanishi; Hadis Morkoç; Joachim Piprek; Euijoon Yoon; Hiroshi Fujioka, Editor(s)

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