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Proceedings Paper

Laser-ablated resist via inspection
Author(s): Charles E. Benjamin; George J. Collini; Ricardo A. Martinez
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Paper Abstract

193 run excimer laser photo-ablation of kerf patterns offers a non-destructive Method of characterizing high-aspect-ratio vias in resist and polymer stacks, for process control and potential rework decisions. Current optical and SEM approaches, including tilt-stage, do not offer sufficient information as diameters approach 0.5 urn in 1 urn thick stacks. Unlike the double-exposed photo-cleave method described by Yang, et al, this technique sections isolated vias after developing, representing actual product structures. Tilt-stage SEN inspection is then used to observe the details of the contour, to assure complete opening and proper dimensions.

Paper Details

Date Published: 1 June 1990
PDF: 1 pages
Proc. SPIE 1261, Integrated Circuit Metrology, Inspection, and Process Control IV, (1 June 1990); doi: 10.1117/12.20078
Show Author Affiliations
Charles E. Benjamin, IBM/East Fishkill Facility (United States)
George J. Collini, IBM/East Fishkill Facility (United States)
Ricardo A. Martinez, IBM/East Fishkill Facility (United States)

Published in SPIE Proceedings Vol. 1261:
Integrated Circuit Metrology, Inspection, and Process Control IV
William H. Arnold, Editor(s)

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