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Proceedings Paper

Quantitative linewidth measurement using in-situ differential SEM techniques
Author(s): Albert Sicignano; Mehdi Vaez-Iravani
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Paper Abstract

Results are reported on the use of the in-situ differential scanning electron microscope in precision micro-metrology of submicron features. It is shown that the technique is capable of providing remarkably stable linescans across etched silicon patterns partially covered with silicon dioxide on the surface. Results are also presented on the metrology of photo-resist, showing relative signal stability even in presence of charging effects. An important ability of the technique, namely its inherent capability to effect an ob5ectively defined alignment of the samples, is extensively utilized in this regard.

Paper Details

Date Published: 1 June 1990
PDF: 7 pages
Proc. SPIE 1261, Integrated Circuit Metrology, Inspection, and Process Control IV, (1 June 1990); doi: 10.1117/12.20077
Show Author Affiliations
Albert Sicignano, Philips Labs. (United States)
Mehdi Vaez-Iravani, Rochester Institute of Technology (United States)

Published in SPIE Proceedings Vol. 1261:
Integrated Circuit Metrology, Inspection, and Process Control IV
William H. Arnold, Editor(s)

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