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Proceedings Paper

Direct green LED development in nano-patterned epitaxy
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Paper Abstract

Blue LED progress has laid the ground works of nitride technology to tackle the higher challenge of longer wavelength direct emitters of green, yellow, and orange. Use of bulk GaN substrate allows leapfrogging epitaxy development and offers crystallographic planes that allow higher crystal perfection and a control over piezoelectric polarization. Their combination allows stabilization of emission wavelength with current. Further improvement is found in substrate patterning on the micro and nano-meter length scale where we find roughly equal performance enhancement due to both, enhancement in light extraction and enhanced crystalline perfection.

Paper Details

Date Published: 4 March 2013
PDF: 5 pages
Proc. SPIE 8641, Light-Emitting Diodes: Materials, Devices, and Applications for Solid State Lighting XVII, 864104 (4 March 2013); doi: 10.1117/12.2007613
Show Author Affiliations
Christian Wetzel, Rensselaer Polytechnic Institute (United States)
Theeradetch Detchprohm, Rensselaer Polytechnic Institute (United States)


Published in SPIE Proceedings Vol. 8641:
Light-Emitting Diodes: Materials, Devices, and Applications for Solid State Lighting XVII
Klaus P. Streubel; Heonsu Jeon; Li-Wei Tu; Martin Strassburg, Editor(s)

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