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Proceedings Paper

InAs/InAsSb type-II superlattice infrared nBn photodetectors and their potential for operation at high temperatures
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Paper Abstract

Ga-free InAs/InAsSb type-II superlattice (T2SL) nBn photodetectors with very low dark current are fabricated and characterized. The typical device without antireflection coating and surface passivation has a cut-off wavelength of 13.2 micrometers, quantum efficiency (QE) of 2.5% and a background limited operating temperature of 70 K. Our analysis shows that the anticipated highest operating temperature of a 10.6 micrometer cut-off Ga-free T2SL nBn device can be 108 K, with a potential to reach 135 K if 20% QE or lower noise is achieved.

Paper Details

Date Published: 4 February 2013
PDF: 7 pages
Proc. SPIE 8631, Quantum Sensing and Nanophotonic Devices X, 86311I (4 February 2013); doi: 10.1117/12.2007612
Show Author Affiliations
Oray Orkun Cellek, Arizona State Univ. (United States)
Zhao-Yu He, Arizona State Univ. (United States)
Zhi-Yuan Lin, Arizona State Univ. (United States)
Ha Sul Kim, Arizona State Univ. (United States)
Shi Liu, Arizona State Univ. (United States)
Yong-Hang Zhang, Arizona State Univ. (United States)


Published in SPIE Proceedings Vol. 8631:
Quantum Sensing and Nanophotonic Devices X
Manijeh Razeghi, Editor(s)

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