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Proceedings Paper

Nd:YAG laser pumped HgGa2S4 parametric oscillator
Author(s): Kiyoshi Kato; Kentaro Miyata
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Paper Abstract

By pumping the 8mm long HgGa2S4 crystal cut at θ = 67.5° and φ = 0° with the Nd:YAG laser in the double-pass SRO (singly resonant oscillator) scheme, we have generated 410mW output power (80mW at 4.180μm and 330mW at 1.428μm) at 30Hz. The pump to output conversion efficiency was 17%. In addition, by heating the HgGa2S4 crystal from 20° to 120° at normal pump incidence (θpm = 67.5°), we have generated the tunable outputs in the 1.413~1.428μm and 4.180~4.311μm range.

Paper Details

Date Published: 12 March 2013
PDF: 6 pages
Proc. SPIE 8604, Nonlinear Frequency Generation and Conversion: Materials, Devices, and Applications XII, 86041K (12 March 2013); doi: 10.1117/12.2007565
Show Author Affiliations
Kiyoshi Kato, Chitose Institute of Science and Technology (Japan)
Kentaro Miyata, MegaOpto, Co. Ltd. (Japan)


Published in SPIE Proceedings Vol. 8604:
Nonlinear Frequency Generation and Conversion: Materials, Devices, and Applications XII
Konstantin L. Vodopyanov, Editor(s)

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