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Proceedings Paper

Analysis of film reflectivity and its impact on photolithographic processing
Author(s): Daniel Claire Baker; Gloria Johnson; Randall P. Bane
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Paper Abstract

Submicron photolithographic processes present significant manufacturing challenges due to the relatively small process windows often found with these technologies. Small upstream variations in the pre-expose portion of the photomodule or subtle radial variations in the imaged layers reflectivity can result in final critical dimensions which are outside of the desired specification. One important parameter which has been found to significantly impact the final critical dimension is film reflectivity. This parameter is difficult to control and is a function of the optical characteristics of the layer being imaged, its thickness, and the resist thickness. In our process, improved poly silicon CD control was sought for a 0.8 jim process. Resist and poly thickness were investigated and optimal thicknesses determined. Poly CD control improved as a direct result of this optimization process.

Paper Details

Date Published: 1 June 1990
PDF: 10 pages
Proc. SPIE 1261, Integrated Circuit Metrology, Inspection, and Process Control IV, (1 June 1990); doi: 10.1117/12.20074
Show Author Affiliations
Daniel Claire Baker, VLSI Technology Corp. (United States)
Gloria Johnson, Prometrix Corp. (United States)
Randall P. Bane, Prometrix Corp. (United States)

Published in SPIE Proceedings Vol. 1261:
Integrated Circuit Metrology, Inspection, and Process Control IV
William H. Arnold, Editor(s)

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