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Proceedings Paper

Semipolar GaN growth on patterned sapphire substrates by hydride vapor phase epitaxy
Author(s): K. Yamane; N. Okada; H. Furuya; K. Tadatomo
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Paper Abstract

This paper presents the growth of thick semipolar {10-11}, {11-22}, and {20-21} GaN layers on n, r, and {22-43} patterned sapphire substrates (PSSs), respectively, by hydride vapor phase epitaxy. The reduction rate of the dislocation density varied with growth planes. For {10-11} GaN layers, the dislocation density drastically decreased at over 100 μm, which was as fast the reduction rate as in the case of the c-plane. It was revealed that the reduction rate of the dislocation density could be controlled by the proper selection of the growth plane. We obtained a freestanding GaN of 2 inch diameter. Thick GaN growth led to the self-separation of the GaN layer from the PSS during cooling process. The separation plane formed at the interface between GaN and PSS, which is different from the case of a conventional c-plane GaN/sapphire. The separationability of the GaN layer from the PSS depended on the selective growth area of the sapphire sidewall.

Paper Details

Date Published: 4 March 2013
PDF: 7 pages
Proc. SPIE 8625, Gallium Nitride Materials and Devices VIII, 862503 (4 March 2013); doi: 10.1117/12.2007376
Show Author Affiliations
K. Yamane, Yamaguchi Univ. (Japan)
N. Okada, Yamaguchi Univ. (Japan)
H. Furuya, Yamaguchi Univ. (Japan)
K. Tadatomo, Yamaguchi Univ. (Japan)


Published in SPIE Proceedings Vol. 8625:
Gallium Nitride Materials and Devices VIII
Jen-Inn Chyi; Yasushi Nanishi; Hadis Morkoç; Joachim Piprek; Euijoon Yoon; Hiroshi Fujioka, Editor(s)

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