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Proceedings Paper

The effects of proton irradiation on the reliability of InAlN/GaN high electron mobility transistors
Author(s): L. Liu; C. F. Lo; Y. Y. Xi; Y. X. Wang; H.-Y. Kim; J. Kim; S. J. Pearton; O. Laboutin; Y. Cao; J. W. Johnson; I. I. Kravchenko; F. Ren
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Paper Abstract

We have investigated the effect of proton irradiation on reliability of InAlN/GaN high electron mobility transistors (HEMTs). Devices were subjected to 5-15 MeV proton irradiations with a fixed dose of 5 × 1015 cm-2, or to a different doses of 2 × 1011, 5 × 1013 or 2 × 1015 cm-2 of protons at a fixed energy of 5 MeV. During off-state electrical stressing, the typical critical voltage for un-irradiated devices was 45 to 55 V. By sharp contrast, no critical voltage was detected for proton irradiated HEMTs up to 100 V, which was instrument-limited. After electrical stressing, no degradation was observed for the drain or gate current-voltage characteristics of the proton-irradiated HEMTs. However, the drain current decreased ~12%, and the reverse bias gate leakage current increased more than two orders of magnitude for un-irradiated HEMTs as a result of electrical stressing.

Paper Details

Date Published: 27 March 2013
PDF: 12 pages
Proc. SPIE 8625, Gallium Nitride Materials and Devices VIII, 86250W (27 March 2013); doi: 10.1117/12.2007287
Show Author Affiliations
L. Liu, The Univ. of Florida (United States)
C. F. Lo, The Univ. of Florida (United States)
Y. Y. Xi, The Univ. of Florida (United States)
Y. X. Wang, The Univ. of Florida (United States)
H.-Y. Kim, Korea Univ. (Korea, Republic of)
J. Kim, Korea Univ. (Korea, Republic of)
S. J. Pearton, The Univ. of Florida (United States)
O. Laboutin, The Univ. of Florida (United States)
Y. Cao, The Univ. of Florida (United States)
J. W. Johnson, The Univ. of Florida (United States)
I. I. Kravchenko, Kopin Corp. (United States)
F. Ren, The Univ. of Florida (United States)


Published in SPIE Proceedings Vol. 8625:
Gallium Nitride Materials and Devices VIII
Jen-Inn Chyi; Yasushi Nanishi; Hadis Morkoç; Joachim Piprek; Euijoon Yoon; Hiroshi Fujioka, Editor(s)

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