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Proceedings Paper

Electronic temperature in phonon-photon-phonon terahertz quantum cascade devices with high-operating temperature performance
Author(s): G. Scamarcio; P. Patimisco; M. V. Santacroce; P. Tempesta; V. Spagnolo; M. S. Vitiello; E. Dupont; S. Fathololoumi; S. R. Laframboise; S. G Razavipour; Z. Wasilewski; D. Ban; H. C. Liu
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Paper Abstract

We report on the experimental measurement of active region lattice (TL) and electronic temperatures (Te) in terahertz quantum cascade devices based on the phonon-photon-phonon scheme, by means of microprobe band-to-band photoluminescence spectroscopy. Three mesa devices, differing for doping region and number of quantum wells composing the active region, have been investigated. With device on, under band alignment for lasing condition, we measured a difference (Te - TL) ~ 40 K much smaller than the typical value (Te - TL ~ 100 K) reported for resonantphonon THz QCLs.

Paper Details

Date Published: 4 February 2013
PDF: 10 pages
Proc. SPIE 8631, Quantum Sensing and Nanophotonic Devices X, 86312C (4 February 2013); doi: 10.1117/12.2006874
Show Author Affiliations
G. Scamarcio, Univ. and Politecnico of Bari (Italy)
P. Patimisco, Univ. and Politecnico of Bari (Italy)
M. V. Santacroce, Univ. and Politecnico of Bari (Italy)
P. Tempesta, Univ. and Politecnico of Bari (Italy)
V. Spagnolo, Univ. and Politecnico of Bari (Italy)
M. S. Vitiello, NEST, Istituto Nanoscienze (Italy)
E. Dupont, National Research Council of Canada (Canada)
S. Fathololoumi, National Research Council of Canada (Canada)
S. R. Laframboise, National Research Council of Canada (Canada)
S. G Razavipour, Univ. of Waterloo (Canada)
Z. Wasilewski, Univ. of Waterloo (Canada)
D. Ban, Univ. of Waterloo (Canada)
H. C. Liu, Shanghai Jiao Tong Univ. (China)


Published in SPIE Proceedings Vol. 8631:
Quantum Sensing and Nanophotonic Devices X
Manijeh Razeghi, Editor(s)

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