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Proceedings Paper

Light from germanium tin heterostructures on silicon
Author(s): E. Kasper; M. Kittler; M. Oehme; T. Arguirov
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Paper Abstract

GeSn LED’s with Sn contents up to 4% exhibit light emission from the direct band transition although GeSn of low Sn contents is an indirect semiconductor.. The emission wavelength is red shifted compared to Ge. The redshift of the direct band transition is confirmed by different optical characterization techniques as photoluminescence, electroluminescence, photodetection and reflectivity. The photon emission energy decreases from 0.81 eV to 0.65 eV for compressively strained GeSn of 0% to 4% Sn content. Growth of GeSn up to 12% Sn is performed for which preliminary characterization results are given.

Paper Details

Date Published: 6 March 2013
PDF: 11 pages
Proc. SPIE 8628, Optoelectronic Integrated Circuits XV, 86280J (6 March 2013); doi: 10.1117/12.2006594
Show Author Affiliations
E. Kasper, Univ. Stuttgart (Germany)
M. Kittler, Brandenburgische Technische Univ. Cottbus (Germany)
M. Oehme, Univ. Stuttgart (Germany)
T. Arguirov, Brandenburgische Technische Univ. Cottbus (Germany)


Published in SPIE Proceedings Vol. 8628:
Optoelectronic Integrated Circuits XV
Louay A. Eldada; El-Hang Lee, Editor(s)

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