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Proceedings Paper

All-silicon and epitaxially grown III-V-on-silicon photodetectors for on-chip optical interconnection applications
Author(s): Andrew W. Poon; Shaoqi Feng; Yu Li; Yu Geng; Kei May Lau
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Paper Abstract

In this paper we review our recent progress in two complementary approaches to photodetectors on silicon photonic chips for on-chip optical interconnection applications, namely epitaxially grown III-V-on-silicon and all-silicon microcavity-enhanced photodetectors, both for the 1550nm wavelengths. On the epitaxially grown III-V-on-silicon photodetectors front, we have demonstrated both normal-incidence and waveguide-butt-coupled p-i-n photodetectors. We simulate the silicon waveguide butt-coupling to the InGaAs absorption region and estimate the absorption efficiency using a three-dimensional finite-difference time-domain method. We optimize the InGaAs absorption region in order to attain a bandwidth of 46 GHz. We also report our latest experimental demonstration of all-silicon microresonator enhanced linear-absorption photodetectors using defect-state absorption in pn-diode-integrated microresonators. Our initial experiments reveal the measured bandwidths to be exceeding 10 GHz.

Paper Details

Date Published: 6 March 2013
PDF: 10 pages
Proc. SPIE 8628, Optoelectronic Integrated Circuits XV, 86280E (6 March 2013); doi: 10.1117/12.2006565
Show Author Affiliations
Andrew W. Poon, Hong Kong Univ. of Science and Technology (Hong Kong, China)
Shaoqi Feng, Hong Kong Univ. of Science and Technology (Hong Kong, China)
Yu Li, Hong Kong Univ. of Science and Technology (Hong Kong, China)
Yu Geng, Hong Kong Univ. of Science and Technology (Hong Kong, China)
Kei May Lau, Hong Kong Univ. of Science and Technology (Hong Kong, China)


Published in SPIE Proceedings Vol. 8628:
Optoelectronic Integrated Circuits XV
Louay A. Eldada; El-Hang Lee, Editor(s)

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