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Proceedings Paper

Surface analysis of free-standing GaN substrates with polar, non-polar, and semipolar crystal orientations
Author(s): O. Romanyuk; P. Jiříček; P. Mutombo; T. Paskova; I. Bartoš
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Paper Abstract

Surface structure of the free-standing GaN substrates with polar (000-1), non-polar (1-100), (11-20), and semipolar (20- 21) surface plane were investigated. Clean polar and non-polar GaN surfaces were prepared by annealing under NH3 atmosphere. (1x1) diffraction patterns were observed by low-energy electron diffraction (LEED) for both polar and non-polar GaN surfaces. The polar GaN surface was found well-ordered, while the non-polar GaN surfaces were found less ordered with atomic steps on the surface. Polar angle dependences of the photoelecton diffraction (PED) intensities exited by MgKα radiation from N 1s level were analyzed for all the GaN surfaces, aiming to determine the polarities of the GaN surfaces with polar and semipolar crystal orientations.

Paper Details

Date Published: 27 March 2013
PDF: 9 pages
Proc. SPIE 8625, Gallium Nitride Materials and Devices VIII, 86252I (27 March 2013); doi: 10.1117/12.2006400
Show Author Affiliations
O. Romanyuk, Institute of Physics of the ASCR, v.v.i. (Czech Republic)
P. Jiříček, Institute of Physics of the ASCR, v.v.i. (Czech Republic)
P. Mutombo, Institute of Physics of the ASCR, v.v.i. (Czech Republic)
T. Paskova, North Carolina State Univ. (United States)
I. Bartoš, Institute of Physics of the ASCR, v.v.i. (Czech Republic)


Published in SPIE Proceedings Vol. 8625:
Gallium Nitride Materials and Devices VIII
Jen-Inn Chyi; Yasushi Nanishi; Hadis Morkoç; Joachim Piprek; Euijoon Yoon; Hiroshi Fujioka, Editor(s)

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