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Proceedings Paper

High-temperature compatible 3D-integration processes for a vacuum-sealed CNT-based NEMS
Author(s): R. Gueye; S. W. Lee; T. Akiyama; D. Briand; C. Roman; C. Hierold; N. F. de Rooij
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Paper Abstract

A System-in-Package (SiP) concept for the 3D-integration of a Single Wall Carbon Nanotube (SWCNT) resonator with its CMOS driving electronics is presented. The key element of this advanced SiP is the monolithic 3D-integration of the MEMS with the CMOS electronics using Through Silicon Vias (TSVs) on an SOI wafer. This SiP includes: A glass cap vacuum-sealed to the main wafer using an eutectic bonding process: a low leak rate of 2.7 10-9 mbar•l/s was obtained; Platinum-TSVs, compatible with the SWCNT growth and release process; The TSVs were developed in a “via first” process and characterized at high-temperature — up to 850 °C. An ohmic contact between the Pt-metallization and the SOI silicon device layer was obtained; The driving CMOS electronic device is assembled to the MEMS using an Au stud bump technology. Keywords: System-in-Package (SiP), vacuum packaging, eutectic bonding, “via-first” TSVs, high-temperature platinum interconnects, ohmic contacts, Au-stud bumps assembly, CMOS electronics.

Paper Details

Date Published: 9 March 2013
PDF: 6 pages
Proc. SPIE 8614, Reliability, Packaging, Testing, and Characterization of MOEMS/MEMS and Nanodevices XII, 86140H (9 March 2013); doi: 10.1117/12.2006216
Show Author Affiliations
R. Gueye, Ecole Polytechnique Fédérale de Lausanne (Switzerland)
S. W. Lee, Eidgenössische Technische Hochschule Zürich (Switzerland)
T. Akiyama, Ecole Polytechnique Fédérale de Lausanne (Switzerland)
D. Briand, Ecole Polytechnique Fédérale de Lausanne (Switzerland)
C. Roman, Eidgenössische Technische Hochschule Zürich (Switzerland)
C. Hierold, Eidgenössische Technische Hochschule Zürich (Switzerland)
N. F. de Rooij, Ecole Polytechnique Fédérale de Lausanne (Switzerland)


Published in SPIE Proceedings Vol. 8614:
Reliability, Packaging, Testing, and Characterization of MOEMS/MEMS and Nanodevices XII
Rajeshuni Ramesham; Herbert R. Shea, Editor(s)

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