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Proceedings Paper

Millimeter and terahertz detectors based on plasmon excitation in InGaAs/InP HEMT devices
Author(s): Nima Nader Esfahani; Robert E. Peale; Walter R. Buchwald; Joshua R. Hendrickson; Justin W. Cleary
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Paper Abstract

Recent progress in the investigation of millimeter-wave and THz detectors based on plasmon excitation in the twodimensional electron gas (2DEG) of a high electron mobility transistor (HEMT) is reported. A tunable resonant polarized photoresponse to mm-wave radiation in the frequency range of 40 to 110 GHz is demonstrated for a gratinggated InGaAs/InP based device. The gate consisted of a metal grating with period of 9 μm specifically designed for excitation of sub-THz plasmons. The resonant excitation of plasmons, which shifts with gate-bias, changes the channel conductance. This resonant change in channel conductance enables potential applications in chip-scale frequency-agile detectors, which can be scaled to mid-THz frequencies.

Paper Details

Date Published: 27 March 2013
PDF: 8 pages
Proc. SPIE 8624, Terahertz, RF, Millimeter, and Submillimeter-Wave Technology and Applications VI, 86240Q (27 March 2013); doi: 10.1117/12.2006137
Show Author Affiliations
Nima Nader Esfahani, Univ. of Central Florida (United States)
Solid State Scientific Corp. (United States)
Robert E. Peale, Univ. of Central Florida (United States)
Walter R. Buchwald, Solid State Scientific Corp. (United States)
Univ. of Massachusetts Boston (United States)
Joshua R. Hendrickson, Air Force Research Lab. (United States)
Justin W. Cleary, Air Force Research Lab. (United States)


Published in SPIE Proceedings Vol. 8624:
Terahertz, RF, Millimeter, and Submillimeter-Wave Technology and Applications VI
Laurence P. Sadwick; Créidhe M. O'Sullivan, Editor(s)

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