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Proceedings Paper

Time dependence of PEB effects
Author(s): Yuichiro Yanagishita; Kazumasa Shigematsu; Kimio Yanagida
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Paper Abstract

Though simulations of PEB (Post Exposure Bake) on the basis of PAC diffusion mode! have been carried out by a number of researchers '' (2) , it has never been confirmed that those could predict experimental data caused by PEB' s effects accurately . Because no details of chemical reactions thernlly induced by PEB are known, fundamental parameters which determine PEB' s effects must be obtained experimentally. We have acquired the volume of changes of development rate function, RATE(M) by PEB with DRM monitoring for some types of photoresist . The values of diffusion length have been obtained by means of compareing experimental B (exposure ener) vs T (development time to clear) curves with simulated ones which is based on RATEOA) data. Their dependence on the baking time has been investigated with fixed FEB temperature and it has been proved that a progress of the diffusion saturates only in less than a few seconds when the diffusion length is about lO'-l5ncn, which is much shorter than the standing wave length(= 66nm, for G-line). Profiles of low contrast resist patterns can be improved by the decrease in development rate of slightly exposed areas by PEB. The effects on these resists depend on the baking time because the volume of the decrease grows with increasing FEB time. On the other hands, for high contrast resists PEB' s diffusion enhances their resolution while the decreases in development rate have little effect on them. Time dependence cannot be observed for these resists because the diffusion length remains constant with increasing FEB time.

Paper Details

Date Published: 1 June 1990
PDF: 11 pages
Proc. SPIE 1261, Integrated Circuit Metrology, Inspection, and Process Control IV, (1 June 1990); doi: 10.1117/12.20060
Show Author Affiliations
Yuichiro Yanagishita, Fujitsu Labs. Ltd. (Japan)
Kazumasa Shigematsu, Fujitsu Labs. Ltd. (Japan)
Kimio Yanagida, Fujitsu Labs. Ltd. (Japan)

Published in SPIE Proceedings Vol. 1261:
Integrated Circuit Metrology, Inspection, and Process Control IV
William H. Arnold, Editor(s)

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