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Proceedings Paper

Silicon-organic hybrid devices
Author(s): L. Alloatti; D. Korn; J. Pfeifle; R. Palmer; S. Koeber; M. Baier; R. Schmogrow; Sebastian Diebold; P. Pahl; T. Zwick; H. Yu; W. Bogaerts; R. Baets; M. Fournier; J. Fedeli; R. Dinu; C. Koos; W. Freude; J. Leuthold
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Paper Abstract

Silicon-organic hybrid (SOH) devices combine silicon waveguides with a number of specialized materials, ranging from third-order optically-nonlinear molecules to second-order nonlinear polymers and liquid-crystals. Second-order nonlinear materials allow building high-speed and low-voltage electro-optic modulators, which are key components for future silicon-based photonics transceivers. We report on a 90 GHz bandwidth phase modulator, and on a 56 Gbit/s QPSK experiment using an IQ Pockels effect modulator. By using liquid-crystal claddings instead, we show experimentally that phase shifters with record-low power consumption and ultra-low voltage-length product of VπL = 0.06 Vmm. Secondorder nonlinear materials, moreover, allow creating nonlinear waveguides for sum- or difference-frequency generation, and for lowest-noise optical parametric amplification. These processes are exploited for a large variety of applications, like in the emerging field of on-chip generation of mid-IR wavelengths, where pump powers are significantly smaller compared to equivalent devices using third-order nonlinear materials. In this work, we present the first SOH waveguide design suited for second-order nonlinear processes. We predict for our device an amplification of 14 dB/cm assuming a conservative χ(2)-nonlinearity of 230 pm/V and a CW pump power as low as 20 dBm.

Paper Details

Date Published: 14 March 2013
PDF: 12 pages
Proc. SPIE 8629, Silicon Photonics VIII, 86290P (14 March 2013); doi: 10.1117/12.2005866
Show Author Affiliations
L. Alloatti, Karlsruhe Institute of Technology (Germany)
IMT, KIT (Germany)
D. Korn, Karlsruhe Institute of Technology (Germany)
J. Pfeifle, Karlsruhe Institute of Technology (Germany)
R. Palmer, Karlsruhe Institute of Technology (Germany)
S. Koeber, Karlsruhe Institute of Technology (Germany)
M. Baier, Karlsruhe Institute of Technology (Germany)
R. Schmogrow, Karlsruhe Institute of Technology (Germany)
Sebastian Diebold, Karlsruhe Institute of Technology (Germany)
P. Pahl, Karlsruhe Institute of Technology (Germany)
T. Zwick, Karlsruhe Institute of Technology (Germany)
H. Yu, Ghent Univ. (Belgium)
W. Bogaerts, Ghent Univ. (Belgium)
R. Baets, Ghent Univ. (Belgium)
M. Fournier, CEA-LETI, Minatec (France)
J. Fedeli, CEA-LETI, Minatec (France)
R. Dinu, Gigoptix Inc. (United States)
C. Koos, IPQ, KIT (Germany)
IMT, KIT (Germany)
W. Freude, IPQ, KIT (Germany)
IMT, KIT (Germany)
J. Leuthold, IPQ, KIT (Germany)
IMT, KIT (Germany)

Published in SPIE Proceedings Vol. 8629:
Silicon Photonics VIII
Joel Kubby; Graham T. Reed, Editor(s)

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