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Proceedings Paper

Efficiency enhancement of InGaN/GaN multiple quantum well solar cells using CdS quantum dots and distributed Bragg reflectors
Author(s): Yu-Lin Tsai; Chien-Chung Lin; Hau-Vei Han; Hsin-Chu Chen; Kuo-Ju Chen; Wei-Chi Lai; Jin-Kong Sheu; Fang-I Lai; Peichen Yu; Hao-Chung Kuo
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Paper Abstract

In recent year, InGaN-based alloy was also considered for photovoltaic devices owing to the distinctive material properties which are benefit photovoltaic performance. However, the Indium tin oxide (ITO) layer on top, which plays a role of transparent conductive oxide (TCO), can absorb UV photons without generating photocurrent. Also, the thin absorber layer in the device, which is consequent result after compromising with limited crystal quality, has caused insufficient light absorption. In this report, we propose an approach for solving these problems. A hybrid design of InGaN/GaN multiple quantum wells (MQWs) solar cells combined with colloidal CdS quantum dots (QDs) and back side distributed Bragg reflectors (DBRs) has been demonstrated. CdS QDs provide down-conversion effect at UV regime to avoid absorption of ITO. Moreover, CdS QDs also exhibit anti-reflective feature. DBRs at the back side have effectively reflected the light back into the absorber layer. CdS QDs enhance the external quantum efficiency (EQE) for light with wavelength shorter than 400 nm, while DBRs provide a broad band enhancement in EQE, especially within the region of 400 nm ~ 430 nm in wavelength. CdS QDs effectively achieved a power conversion efficiency enhancement as high as 7.2% compared to the device without assistance of CdS QDs. With the participation of DBRs, the power conversion efficiency enhancement has been further boosted to 14%. We believe that the hybrid design of InGaN/GaN MQWs solar cells with QDs and DBRs can be a method for high efficiency InGaN/GaN MQWs solar cells.

Paper Details

Date Published: 25 March 2013
PDF: 6 pages
Proc. SPIE 8620, Physics, Simulation, and Photonic Engineering of Photovoltaic Devices II, 86201M (25 March 2013); doi: 10.1117/12.2005823
Show Author Affiliations
Yu-Lin Tsai, National Chiao Tung Univ. (Taiwan)
Chien-Chung Lin, National Chiao Tung Univ. (Taiwan)
Hau-Vei Han, National Chiao Tung Univ. (Taiwan)
Hsin-Chu Chen, National Chiao Tung Univ. (Taiwan)
Kuo-Ju Chen, National Chiao Tung Univ. (Taiwan)
Wei-Chi Lai, National Cheng Kung Univ. (Taiwan)
Jin-Kong Sheu, National Cheng Kung Univ. (Taiwan)
Fang-I Lai, Yuan Ze Univ. (Taiwan)
Peichen Yu, National Chiao Tung Univ. (Taiwan)
Hao-Chung Kuo, National Chiao Tung Univ. (Taiwan)


Published in SPIE Proceedings Vol. 8620:
Physics, Simulation, and Photonic Engineering of Photovoltaic Devices II
Alexandre Freundlich; Jean-Francois Guillemoles, Editor(s)

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