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Proceedings Paper

A UV Si-photodiode with almost 100% internal Q.E. and high transmittance on-chip multilayer dielectric stack
Author(s): Y. Koda; R. Kuroda; T. Nakazawa; Y. Nakao; S. Sugawa
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Paper Abstract

In this work, by optimizing the structure and thickness of the on-chip multilayer dielectric stack using SiO2 and low extinction coefficient Si3N4 with the high UV-light sensitivity photodiode technology, high external Q.E. and high stability to UV-light were both successfully obtained. By changing the structure of on-chip multilayer dielectric stack and film thickness, we obtained the photodiode with the high external Q.E. in the desired UV-light region.

Paper Details

Date Published: 19 February 2013
PDF: 6 pages
Proc. SPIE 8659, Sensors, Cameras, and Systems for Industrial and Scientific Applications XIV, 86590J (19 February 2013); doi: 10.1117/12.2005574
Show Author Affiliations
Y. Koda, Tohoku Univ. (Japan)
R. Kuroda, Tohoku Univ. (Japan)
T. Nakazawa, Tohoku Univ. (Japan)
Y. Nakao, Tohoku Univ. (Japan)
S. Sugawa, Tohoku Univ. (Japan)


Published in SPIE Proceedings Vol. 8659:
Sensors, Cameras, and Systems for Industrial and Scientific Applications XIV
Ralf Widenhorn; Antoine Dupret, Editor(s)

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