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Proceedings Paper

Optimized performance of 808 nm diode laser bars for efficient high-power operation
Author(s): J. G. Bai; L. Bao; W. Dong; X. Guan; Sandrio Elim; S. Zhang; J. Patterson; M. Grimshaw; M. DeVito; M. Kanskar; R. Martinsen; J. Haden
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Paper Abstract

nLIGHT optimized both the high-temperature (HT) and the high-efficiency (HE) epitaxial designs for efficient highpower continuous-wave (CW) operation by implementing nLIGHT’s facet passivation technology (nXLT) into our 808 nm diode laser bars. The application of a refined phenomenological model of the diode lasers allowed tailoring of the device parameters to obtain optimized bar performance. In other words, we adjusted modeling inputs such as bar layout and front facet coating reflectivity to optimize operational indicator outputs such as wall-plug efficiency and operation currents at specific power ratings. Thus, both time and cost were saved without the need of extra experimental runs. We demonstrated that both HT and HE epitaxial designs can support centimeter bar geometries with power ratings above 100 W/bar. At the standard power rating of 100 W/bar, the HE designs show advantages in both operating current and wall-plug efficiency when compared to the HT design. With the newly released HE epitaxial designs, wall-plug efficiency ~58% is achieved for a power rating of 150 W/bar.

Paper Details

Date Published: 26 February 2013
PDF: 7 pages
Proc. SPIE 8605, High-Power Diode Laser Technology and Applications XI, 86050F (26 February 2013); doi: 10.1117/12.2005479
Show Author Affiliations
J. G. Bai, nLIGHT Corp. (United States)
L. Bao, nLIGHT Corp. (United States)
W. Dong, nLIGHT Corp. (United States)
X. Guan, nLIGHT Corp. (United States)
Sandrio Elim, nLIGHT Corp. (United States)
S. Zhang, nLIGHT Corp. (United States)
J. Patterson, nLIGHT Corp. (United States)
M. Grimshaw, nLIGHT Corp. (United States)
M. DeVito, nLIGHT Corp. (United States)
M. Kanskar, nLIGHT Corp. (United States)
R. Martinsen, nLIGHT Corp. (United States)
J. Haden, nLIGHT Corp. (United States)


Published in SPIE Proceedings Vol. 8605:
High-Power Diode Laser Technology and Applications XI
Mark S. Zediker, Editor(s)

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