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Proceedings Paper

Narrow-linewidth three-electrode regrowth-free semiconductor DFB lasers with uniform surface grating
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Paper Abstract

There has been much interest in developing low-cost laser sources for applications such as photonics integrated circuits and advanced coherent optical communications. The ultimate objectives in this development include wide wavelength tunability, a narrow linewidth, and an ease of integration with other devices. For this purpose, semiconductor surface grating distributed feedback (SG-DFB) lasers have been introduced. SG-DFB manufacturing consists of a unique sequence of planar epitaxial growth resulting in a major simplification to the fabrication process. SG-DFB lasers are highly monolithically integrate-able with other devices due to their small footprint. The segmentation of the built-in top electrode helps to alleviate the adverse spatial-hole burning effects encountered in single-electrode devices and brings hence significant enhancements to the laser performance. For the first time, we report here on the design, fabrication, and characterization of InGaAsP/InP multiple-quantum-well (MQW) SG-DFB lasers with uniform third-order surface grating etched by means of stepper lithography and inductively-coupled reactive-ion. The uncoated device reported here is 750 μm-long SG-DFB laser whose central and lateral top electrodes are 244 μmlongs each, separated by two 9 μm-long grooves. The experimental characterization shows stable single mode operation at room temperature under uniform and non-uniform injection. High side mode suppression ratios (SMSRs) (50-55dB) under a wide range of injection current have been discerned as well. A relatively broad wavelength tuning (<4nm) has also been observed. Moreover, a narrow linewidth (<300 kHz) has been recorded for different injection currents.

Paper Details

Date Published: 4 March 2013
PDF: 8 pages
Proc. SPIE 8640, Novel In-Plane Semiconductor Lasers XII, 864009 (4 March 2013); doi: 10.1117/12.2005368
Show Author Affiliations
Kais Dridi, Univ. of Ottawa (Canada)
Abdessamad Benhsaien, Univ. of Ottawa (Canada)
Akram Akrout, Univ. of Ottawa (Canada)
Jessica Zhang, CMC Microsystems (Canada)
Trevor Hall, Univ. of Ottawa (Canada)


Published in SPIE Proceedings Vol. 8640:
Novel In-Plane Semiconductor Lasers XII
Alexey A. Belyanin; Peter M. Smowton, Editor(s)

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