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Proceedings Paper

Mid-infrared photonics devices in SOI
Author(s): G. Z. Mashanovich; M. Nedeljkovic; M. M Milošević; Y. Hu; T. M. Ben Masaud; E. Jaberansary; X. Chen; M. Strain; M. Sorel; A. C. Peacock; H. M. H. Chong; G. T. Reed
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Paper Abstract

In this paper we present silicon photonics devices designed for the 3-4μm wavelength region including waveguides, MMIs, ring resonators and Mach-Zehnder interferometers. The devices are based on silicon on insulator (SOI) platform. We show that 400-500 nm high silicon waveguides can have propagation losses as low as ~ 4 dB/cm at 3.8μm. We also demonstrate MMIs with insertion loss of 0.25 dB, high extinction ratio asymmetric Mach-Zehnder interferometers, and SOI ring resonators. This combined with our previous results reported at 3.4μm confirm that SOI is a viable platform for the 3-4 μm region and that low loss mid-infrared passive devices can be realized on it.

Paper Details

Date Published: 14 March 2013
PDF: 6 pages
Proc. SPIE 8629, Silicon Photonics VIII, 86290J (14 March 2013); doi: 10.1117/12.2005341
Show Author Affiliations
G. Z. Mashanovich, Univ. of Southampton (United Kingdom)
M. Nedeljkovic, Univ. of Southampton (United Kingdom)
M. M Milošević, Univ. of Surrey (United Kingdom)
Y. Hu, Univ. of Southampton (United Kingdom)
T. M. Ben Masaud, Univ. of Southampton (United Kingdom)
E. Jaberansary, Univ. of Southampton (United Kingdom)
X. Chen, Univ. of Southampton (United Kingdom)
M. Strain, Univ. of Glasgow (United Kingdom)
M. Sorel, Univ. of Glasgow (United Kingdom)
A. C. Peacock, Univ. of Southampton (United Kingdom)
H. M. H. Chong, Univ. of Southampton (United Kingdom)
G. T. Reed, Univ. of Southampton (United Kingdom)


Published in SPIE Proceedings Vol. 8629:
Silicon Photonics VIII
Joel Kubby; Graham T. Reed, Editor(s)

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