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Proceedings Paper

Drift-diffusion modeling of InP-based triple junction solar cells
Author(s): M. P. Lumb; M. González; C. G. Bailey; I. Vurgaftman; J. R. Meyer; J. Abell; M. Yakes; R. Hoheisel; J. G. Tischler; P. N. Stavrinou; M. Fuhrer; N. J. Ekins-Daukes; R. J. Walters
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Paper Abstract

In this work, we use an analytical drift-diffusion model, coupled with detailed carrier transport and minority carrier lifetime estimates, to make realistic predictions of the conversion efficiency of InP-based triple junction cells. We evaluate the possible strategies for overcoming the problematic top cell for the triple junction, and make comparisons of the more realistic charge transport model with incumbent technologies grown on Ge or GaAs substrates.

Paper Details

Date Published: 25 March 2013
PDF: 9 pages
Proc. SPIE 8620, Physics, Simulation, and Photonic Engineering of Photovoltaic Devices II, 86201G (25 March 2013); doi: 10.1117/12.2005332
Show Author Affiliations
M. P. Lumb, U.S. Naval Research Lab. (United States)
The George Washington Univ. (United States)
M. González, U.S. Naval Research Lab. (United States)
Sotera Defense Solutions (United States)
C. G. Bailey, U.S. Naval Research Lab. (United States)
I. Vurgaftman, U.S. Naval Research Lab. (United States)
J. R. Meyer, U.S. Naval Research Lab. (United States)
J. Abell, U.S. Naval Research Lab. (United States)
M. Yakes, U.S. Naval Research Lab. (United States)
R. Hoheisel, U.S. Naval Research Lab. (United States)
The George Washington Univ. (United States)
J. G. Tischler, U.S. Naval Research Lab. (United States)
P. N. Stavrinou, Imperial College London (United Kingdom)
M. Fuhrer, Imperial College London (United Kingdom)
N. J. Ekins-Daukes, Imperial College London (United Kingdom)
R. J. Walters, U.S. Naval Research Lab. (United States)


Published in SPIE Proceedings Vol. 8620:
Physics, Simulation, and Photonic Engineering of Photovoltaic Devices II
Alexandre Freundlich; Jean-Francois Guillemoles, Editor(s)

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