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Proceedings Paper

An improved wire grid polarizer for thermal infrared applications
Author(s): Matthew C. George; Jonathan Bergquist; Bin Wang; Rumyana Petrova; Hua Li; Eric Gardner
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Paper Abstract

Moxtek has developed a high contrast IR polarizer on silicon suitable for long wavelength thermal IR applications using our aluminum nanowire, large area patterning capabilities. Between 7 and 15 microns, our 144 nm pitch polarizers transmit better than 70% of the passing polarization state and have a contrast ratio better than 40 dB. Transmission and reflectance measurements were made using a Fourier Transform Infrared (FTIR) spectrometer with instrument accuracy verified using silicon and germanium reference standards. Results were compared to RCWA modeling of the wire grid polarizer (WGP) performance on antireflection-coated wafers. The FTIR instrument noise floor limited the maximum contrast measurement to about 40 dB, but high polarizer contrast was verified at 10.6 μm using a CO2 laser and pyroelectric detector. A continuous wave Gaussian beam from a CO2 laser was used for Laser Damage Threshold (LDT) testing and showed LDT values of 110 kW/cm2 and 10 kW/cm2 in the blocking and passing states respectively. Analysis of laser damage threshold test samples shows the damage propagating from defects in the anti-reflection (AR) coating. Removing these AR coating defects should improve LDT performance and transmission in the thermal IR.

Paper Details

Date Published: 5 March 2013
PDF: 7 pages
Proc. SPIE 8613, Advanced Fabrication Technologies for Micro/Nano Optics and Photonics VI, 86131I (5 March 2013); doi: 10.1117/12.2005318
Show Author Affiliations
Matthew C. George, Moxtek Inc. (United States)
Jonathan Bergquist, Moxtek Inc. (United States)
Bin Wang, Moxtek Inc. (United States)
Rumyana Petrova, Moxtek Inc. (United States)
Hua Li, Moxtek Inc. (United States)
Eric Gardner, Moxtek Inc. (United States)


Published in SPIE Proceedings Vol. 8613:
Advanced Fabrication Technologies for Micro/Nano Optics and Photonics VI
Georg von Freymann; Winston V. Schoenfeld; Raymond C. Rumpf, Editor(s)

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